of Volume 1. - I. Energy Loss and Straggling. - The Treatment of Energy-Loss Fluctuations in Surface-Layer Analysis by Ion Beams. - Evidence of Solid State Effects in the Energy Loss of 4He Ions in Matter. - Empirical Stopping Cross Sections for 4He Ions. - Determination of Stopping Cross Sections by Rutherford Backscattering. - Depth Profiling of Implanted 3He in Solids by Nuclear Reaction and Rutherford Backscattering. - Energy Loss Straggling of Protons in Thick Absorbers. - Energy Dependence of Proton Straggling in Carbon. - Energy Straggling of 4He Ions in Al and Cu in the Backscattering Geometry. - Energy Spreading Calculations and Consequences. - Analysis of Nuclear Scattering Cross Sections by Means of Molecular Ions. - II. Backscattering Analysis. - Determining Concentration vs. Depth Profiles from Backscattering Spectra without Using Energy Loss Values. - Comparative Analysis of Surface Layers by Backscattering and by Auger Electron Spectroscopy. - Analyzing the Formation of a Thin Compound Film by Taking Moments on Backscattering Spectra. - Computer Analysis of Nuclear Backscattering. - Some Practical Aspects of Depth Profiling Gases in Metals by Proton Backscattering: Application to Helium and Hydrogen Isotopes. - Depth Profiling of Deuterium and Helium in Metals by Elastic Proton Scattering: A Measurement of the Enhancement of the Elastic Scattering Cross Section over Rutherford Scattering Cross Section. - Near-Surface Investigation by Backscattering of N+ Ions and Grazing Angle Beam Incidence. - The Application of Low Angle Rutherford Backscattering to Surface Layer Analysis. - Measurement of Projected and Lateral Range Parameters for Low Energy Heavy Ions in Silicon by Rutherford Backscattering. - Range Parameters of Heavy Ions in Silicon and Germanium with Reduced Energies from 0. 001 ? ? ? 10. - On Problems of Resolving Power in Rutherford Backscattering. - Studies of Surface Contaminations Composition and Formation of Superconducting Layers of V Nb3Sn and of Tunneling Elements Using High Energetic Protons Combined with Heavy Ions. - Determination of Implanted Carbon Profiles in NbC Single Crystals from Random Backscattering Spectra. - Pore Size from Resonant Charged Particle Backscattering. - Measurement of Thermal Diffusion Profiles of Gold Electrodes on Amorphous Semiconductor Devices by Deconvolution of Ion Backscattering Spectra. - Enhanced Sensitivity of Oxygen Detection by the 3. 05 MeV (??) Plastic Scattering. - Progress Report on the Backscattering Standards Project (Abstract). - III. Applications of Backscattering and Combined Techniques. - Ion Beam Studies of Thin Films and Interfacial Reactions. - Studies of Tantalum Nitride Thin Film Resistors. - Investigation of CVD Tungsten Metallizations on Silicon by Backscattering. - Ion Beam Analysis of Aluminium Profiles in Heteroepitaxial Ga1-xAlxAs-Layers. - Analysis of Ga1-xA1xAs-GaAs Heteroepitaxial Layers by Proton Backscattering. - Interdiffusion Kinetics in Thin Film Couples. - Backscattering and T. E. M. Studies of Grain Boundary Diffusion in Thin Metal Films. - The Analysis of Nickel and Chromium Migration Through Gold Layers. - Applications of Ion Beam Analysis to Insulators. - Lithium Ion Backscattering as a Novel Tool for the Charac terization of Oxidized Phases of Aluminum Obtained from Industrial Anodization Procedures. - Investigation of an Amino Suger-Like Compound from the Cell Walls of Bacteria Using Backscattering of MeV Particles. - IV. Equipment. - Versatile Apparatus for Real-Time Profiling of Interacting Thin Films Deposited in Situ. - Application of a High-Resolution MagneticSpectrometer to Near-Surface Materials Analysis. - Rutherford Backscattering Analysis with Very High Depth Resolution Using an Electrostatic Analysing System. - An Apparatus for the Study of Ion and Photon Emission from Ion Bombarded Surfaces: I. Some Preliminary Results. - Author Index. Language: English